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The storage element of the DRAM memory cell is the capacitor labeled (4) in the diagram above. The charge stored in the capacitor degrades over time, so its value must be refreshed (read and rewritten) periodically. The nMOS transistor (3) acts as a gate to allow reading or writing when open or storing when closed. [37]
Off-line storage is computer data storage on a medium or a device that is not under the control of a processing unit. [9] The medium is recorded, usually in a secondary or tertiary storage device, and then physically removed or disconnected. It must be inserted or connected by a human operator before a computer can access it again.
In a computer, the memory bank may be determined by the memory controller along with physical organization of the hardware memory slots. In a typical synchronous dynamic random-access memory (SDRAM) or double data rate SDRAM (DDR SDRAM), a bank consists of multiple rows and columns of storage units, and is usually spread out across several chips .
Off-line bulk storage – Tertiary and Off-line storage. This is a general memory hierarchy structuring. Many other structures are useful. For example, a paging algorithm may be considered as a level for virtual memory when designing a computer architecture, and one can include a level of nearline storage between online and offline storage.
Description: This picture contains a diagram of different types of computer storage, divided according to their distance from the central processing unit of a computer. The descriptive texts are in English. Additionally, common technology and capacity found in home computers of 2005 is indicated next to some items. Date
Memory architecture describes the methods used to implement electronic computer data storage in a manner that is a combination of the fastest, most reliable, most durable, and least expensive way to store and retrieve information. Depending on the specific application, a compromise of one of these requirements may be necessary in order to ...
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In SRAM, the memory cell is a type of flip-flop circuit, usually implemented using FETs. This means that SRAM requires very low power when not being accessed, but it is expensive and has low storage density. A second type, DRAM, is based around a capacitor. Charging and discharging this capacitor can store a "1" or a "0" in the cell.