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The strength of the acid determines the speed of the etching process. The etching process is known as biting (see also spit-biting below). The waxy resist prevents the acid from biting the parts of the plate which have been covered. The longer the plate remains in the acid the deeper the "bites" become. Example of etching
Etching is a critically important process module in fabrication, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. In some cases, the masking material is a photoresist which has been patterned using photolithography.
Micro-machining starts with a silicon wafer or other substrate upon which new layers are grown. These layers are selectively etched by photo-lithography; either a wet etch involving an acid, or a dry etch involving an ionized gas (or plasma). Dry etching can combine chemical etching with physical etching or ion bombardment. Surface micro ...
Chemical milling or industrial etching is the subtractive manufacturing process of using baths of temperature-regulated etching chemicals to remove material to create an object with the desired shape. [1] [2] Other names for chemical etching include photo etching, chemical etching, photo chemical etching and photochemical machining. It is ...
In intaglio printing, the lines to be printed are cut into a metal (e.g. copper) plate by means either of a cutting tool called a burin, held in the hand – in which case the process is called engraving; or through the corrosive action of acid – in which case the process is known as etching. [6] [7] In etching, for example, the plate is pre ...
Glass etching cream is used by hobbyists as it is generally easier to use than acid. Available from art supply stores, it consists of fluoride compounds, such as hydrogen fluoride and sodium fluoride. As the types of acids used in this process are extremely hazardous (see hydrofluoric acid for safety), abrasive methods have gained popularity.
To etch through a 0.5 mm silicon wafer, for example, 100–1000 etch/deposit steps are needed. The two-phase process causes the sidewalls to undulate with an amplitude of about 100–500 nm . The cycle time can be adjusted: short cycles yield smoother walls, and long cycles yield a higher etch rate.
Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes with addition of nitrogen, argon, helium and other gases) that dislodge portions of the material from the exposed surface.
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