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  2. Field-effect transistor - Wikipedia

    en.wikipedia.org/wiki/Field-effect_transistor

    The device consists of an active channel through which charge carriers, electrons or holes, flow from the source to the drain. Source and drain terminal conductors are connected to the semiconductor through ohmic contacts. The conductivity of the channel is a function of the potential applied across the gate and source terminals.

  3. Power MOSFET - Wikipedia

    en.wikipedia.org/wiki/Power_MOSFET

    NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]

  4. Voltage-controlled resistor - Wikipedia

    en.wikipedia.org/wiki/Voltage-controlled_resistor

    In the circuit on the figure, a non-linearized VCR design, the voltage-controlled resistor, the LSK489C JFET, is used as a programmable voltage divider. The VGS supply sets the level of the output resistance of the JFET. The drain-to-source resistance of the JFET (R DS) and the drain resistor (R 1) form the voltage-divider network. The output ...

  5. JFET - Wikipedia

    en.wikipedia.org/wiki/JFET

    The flow of water through a hose can be controlled by squeezing it to reduce the cross section and the flow of electric charge through a JFET is controlled by constricting the current-carrying channel. The current also depends on the electric field between source and drain (analogous to the difference in pressure on either end of the hose ...

  6. Drain-induced barrier lowering - Wikipedia

    en.wikipedia.org/wiki/Drain-induced_barrier_lowering

    As drain voltage is increased, the depletion region of the p-n junction between the drain and body increases in size and extends under the gate, so the drain assumes a greater portion of the burden of balancing depletion region charge, leaving a smaller burden for the gate. As a result, the charge present on the gate retains charge balance by ...

  7. Threshold voltage - Wikipedia

    en.wikipedia.org/wiki/Threshold_voltage

    The threshold voltage, commonly abbreviated as V th or V GS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (V GS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency.

  8. Antistatic device - Wikipedia

    en.wikipedia.org/wiki/Antistatic_device

    An ionizing bar, sometimes referred to as a static bar, is a type of industrial equipment used for removing static electricity from a production line to dissipate static cling and other such phenomena that would disrupt the line. It is important in the manufacturing and printing industries, although it can be used in other applications as well.

  9. Contact resistance - Wikipedia

    en.wikipedia.org/wiki/Contact_resistance

    where and are contact and channel resistances, respectively, / is the channel length/width, is gate insulator capacitance (per unit of area), is carrier mobility, and and are gate-source and drain-source voltages. Therefore, the linear extrapolation of total resistance to the zero channel length provides the contact resistance.