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  2. Qimonda - Wikipedia

    en.wikipedia.org/wiki/Qimonda

    Qimonda produced computing and consumer DRAM, graphics RAM, mobile RAM and Flash memory. [3] Qimonda was primarily reliant on its Deep Trench technology in comparison to the stack capacitor systems of its rival manufacturers. [4] Deep Trench has the benefit of a theoretically smaller footprint than its stack capacitor rival.

  3. Deep reactive-ion etching - Wikipedia

    en.wikipedia.org/wiki/Deep_reactive-ion_etching

    in DRAM memory circuits, capacitor trenches may be 10–20 μm deep, in MEMS, DRIE is used for anything from a few micrometers to 0.5 mm. in irregular chip dicing, DRIE is used with a novel hybrid soft/hard mask to achieve sub-millimeter etching to dice silicon dies into lego-like pieces with irregular shapes. [7] [8] [9]

  4. Dynamic random-access memory - Wikipedia

    en.wikipedia.org/wiki/Dynamic_random-access_memory

    The trench capacitor is constructed by etching a deep hole into the silicon substrate. The substrate volume surrounding the hole is then heavily doped to produce a buried n + plate with low resistance. A layer of oxide-nitride-oxide dielectric is grown or deposited, and finally the hole is filled by depositing doped polysilicon, which forms the ...

  5. Charge trap flash - Wikipedia

    en.wikipedia.org/wiki/Charge_trap_flash

    Charge trap flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory. It is a type of floating-gate MOSFET memory technology , but differs from the conventional floating-gate technology in that it uses a silicon nitride film to store electrons rather than the doped polycrystalline silicon typical ...

  6. Memory cell (computing) - Wikipedia

    en.wikipedia.org/wiki/Memory_cell_(computing)

    The two most common types of DRAM memory cells since the 1980s have been trench-capacitor cells and stacked-capacitor cells. [25] Trench-capacitor cells are where holes (trenches) are made in a silicon substrate, whose side walls are used as a memory cell, whereas stacked-capacitor cells are the earliest form of three-dimensional memory (3D ...

  7. eDRAM - Wikipedia

    en.wikipedia.org/wiki/EDRAM

    Embedding memory on the ASIC or processor allows for much wider buses and higher operation speeds, and due to much higher density of DRAM in comparison to SRAM, [citation needed] larger amounts of memory can be installed on smaller chips if eDRAM is used instead of eSRAM. eDRAM requires additional fab process steps compared with embedded SRAM ...

  8. Ferroelectric RAM - Wikipedia

    en.wikipedia.org/wiki/Ferroelectric_RAM

    The basic storage element is a ferroelectric capacitor. The capacitor can be polarized up or down by applying an electric field [18] Similar to ferroelectric RAM, but the atoms align themselves in the direction of an external magnetic force. This effect is used to store data Has non-volatile elements along with high speed SRAM

  9. Front end of line - Wikipedia

    en.wikipedia.org/wiki/Front_end_of_line

    Illustration of FEOL (device generation in the silicon, bottom) and BEOL (depositing metalization layers, middle part) to connect the devices. CMOS fabrication process. The front end of line (FEOL) is the first portion of IC fabrication where the individual components (transistors, capacitors, resistors, etc.) are patterned in a semiconductor substrate. [1]