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It was developed for microelectromechanical systems (MEMS), which require these features, but is also used to excavate trenches for high-density capacitors for DRAM and more recently for creating through-silicon vias in advanced 3D wafer level packaging technology.
In order to change the capacitor size without affecting the capacitance, different cell orientations are being used. Some of these include stacked or trench capacitors. [53] With the emergence of trench capacitors, the problem of fabricating these capacitors comes into play, especially as the size of semiconductors decreases. ALD allows trench ...
Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between adjacent semiconductor device components. STI is generally used on CMOS process technology nodes of 250 nanometers and smaller.
Illustration of FEOL (device generation in the silicon, bottom) and BEOL (depositing metalization layers, middle part) to connect the devices. CMOS fabrication process. The front end of line (FEOL) is the first portion of IC fabrication where the individual components (transistors, capacitors, resistors, etc.) are patterned in a semiconductor substrate. [1]
Fan-out wafer-level packaging: Variation of WLCSP. Like a BGA package but with the interposer built directly atop the die and encapsulated alongside it. eWLB: Embedded wafer level ball grid array: Variation of WLCSP. MICRO SMD-Chip-size package (CSP) developed by National Semiconductor [21] COB: Chip on board: Bare die supplied without a package.
Visualizing via-first, via-middle and via-last TSVs. Dictated by the manufacturing process, there exist three different types of TSVs: via-first TSVs are fabricated before the individual component (transistors, capacitors, resistors, etc.) are patterned (front end of line, FEOL), via-middle TSVs are fabricated after the individual component are patterned but before the metal layers (back-end ...
IPDs (IPCs) Single SMT chip solutions for Bandpass, Lowpass, HighPass, and other combinations based on LC, RC etc. integrated networks on a ceramic substrate Integrated passives (resistors and capacitors) on high resistive silicon substrate coated by thick silicon dioxide Active IC flipped as face down on the integrated passive substrate enabling 2D integration Example of RF IPD balun on Glass ...
Back end of the line or back end of line (BEOL) is a process in semiconductor device fabrication that consists of depositing metal interconnect layers onto a wafer already patterned with devices. It is the second part of IC fabrication, after front end of line (FEOL). In BEOL, the individual devices (transistors, capacitors, resistors, etc ...