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2. H-bridge - Wikipedia

   en.wikipedia.org/wiki/H-bridge

   The most efficient MOSFET designs use N-channel MOSFETs on both the high side and low side because they typically have a third of the ON resistance of P-channel MOSFETs. This requires a more complex design since the gates of the high side MOSFETs must be driven positive with respect to the DC supply rail.

3. Power MOSFET - Wikipedia

   en.wikipedia.org/wiki/Power_MOSFET

   A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages ...

4. Gate driver - Wikipedia

   en.wikipedia.org/wiki/Gate_driver

   With the ability to place high-voltage circuitry (in a ‘well’ formed by polysilicon rings), that can ‘float’ 600 V or 1200 V, on the same silicon away from the rest of the low-voltage circuitry, high-side power MOSFETs or IGBTs exist in many popular off-line circuit topologies such as buck, synchronous boost, half-bridge, full-bridge ...

5. MOSFET - Wikipedia

   en.wikipedia.org/wiki/MOSFET

   MOSFET analog switches use the MOSFET to pass analog signals when on, and as a high impedance when off. Signals flow in both directions across a MOSFET switch. In this application, the drain and source of a MOSFET exchange places depending on the relative voltages of the source and drain electrodes.

6. Field-effect transistor - Wikipedia

   en.wikipedia.org/wiki/Field-effect_transistor

   I–V characteristics and output plot of a JFET n-channel transistor Simulation result for right side: formation of inversion channel (electron density) and left side: current-gate voltage curve (transfer characteristics) in an n-channel nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V. FET conventional symbol ...

7. Bootstrapping (electronics) - Wikipedia

   en.wikipedia.org/wiki/Bootstrapping_(electronics)

   When the low-side N-FET turns off, the low side of the bootstrap capacitor remains connected to the source of the high-side N-FET, and the capacitor discharges some of its energy driving the gate of the high-side N-FET to a voltage sufficiently above V+ to turn the high-side N-FET fully on; while the bootstrap diode blocks that above-V+ voltage ...