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  2. Doping (semiconductor) - Wikipedia

    en.wikipedia.org/wiki/Doping_(semiconductor)

    Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.

  3. List of semiconductor materials - Wikipedia

    en.wikipedia.org/wiki/List_of_semiconductor...

    A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).

  4. List of silicon producers - Wikipedia

    en.wikipedia.org/wiki/List_of_silicon_producers

    This is a list of silicon producers. The industry involves several very different stages of production. Production starts at silicon metal, which is the material used to gain high purity silicon. High purity silicon in different grades of purity is used for growing silicon ingots, which are sliced to wafers in a process called wafering.

  5. Ion implantation - Wikipedia

    en.wikipedia.org/wiki/Ion_implantation

    Semiconductor doping with boron, phosphorus, or arsenic is a common application of ion implantation. When implanted in a semiconductor, each dopant atom can create a charge carrier in the semiconductor after annealing. A hole can be created for a p-type dopant, and an electron for an n-type dopant. This modifies the conductivity of the ...

  6. Polycrystalline silicon - Wikipedia

    en.wikipedia.org/wiki/Polycrystalline_silicon

    The resistivity, mobility, and free-carrier concentration in monocrystalline silicon vary with doping concentration of the single crystal silicon. Whereas the doping of polycrystalline silicon does have an effect on the resistivity, mobility, and free-carrier concentration, these properties strongly depend on the polycrystalline grain size ...

  7. Czochralski method - Wikipedia

    en.wikipedia.org/wiki/Czochralski_method

    Monocrystalline silicon (mono-Si) grown by the Czochralski method is often referred to as monocrystalline Czochralski silicon (Cz-Si). It is the basic material in the production of integrated circuits used in computers, TVs, mobile phones and all types of electronic equipment and semiconductor devices. [6]

  8. Monocrystalline silicon - Wikipedia

    en.wikipedia.org/wiki/Monocrystalline_silicon

    The primary application of monocrystalline silicon is in the production of discrete components and integrated circuits.Ingots made by the Czochralski method are sliced into wafers about 0.75 mm thick and polished to obtain a regular, flat substrate, onto which microelectronic devices are built through various microfabrication processes, such as doping or ion implantation, etching, deposition ...

  9. Silicon carbide - Wikipedia

    en.wikipedia.org/wiki/Silicon_carbide

    Silicon carbide (SiC), also known as carborundum (/ ˌ k ɑːr b ə ˈ r ʌ n d əm /), is a hard chemical compound containing silicon and carbon. A wide bandgap semiconductor , it occurs in nature as the extremely rare mineral moissanite , but has been mass-produced as a powder and crystal since 1893 for use as an abrasive .

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