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Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films .
In chemistry, a precursor is a compound that contributes in a chemical reaction and produces another compound, or a chemical substance that gives rise to another more significant chemical product. Since several years metal-organic compounds are widely used as molecular precursors for the chemical vapor deposition process (MOCVD).
In synthetic diamond grown by the high-pressure high-temperature synthesis [5] or chemical vapor deposition, [6] [7] defects with symmetry lower than tetrahedral align to the direction of the growth. Such alignment has also been observed in gallium arsenide [ 8 ] and thus is not unique to diamond.
In the metal organic chemical vapor deposition (MOCVD) technique, reactant gases are combined at elevated temperatures in the reactor to cause a chemical interaction, resulting in the deposition of materials on the substrate. A reactor is a chamber made of a material that does not react with the chemicals being used.
Evaporative deposition: the material to be deposited is heated to a high vapor pressure by electrical resistance heating in "high" vacuum. [4] [5] Close-space sublimation, the material, and substrate are placed close to one another and radiatively heated. Pulsed laser deposition: a high-power laser ablates material from the target into a vapor.
Figure 1. Conventional Chemical Vapour Infiltration. [3]• Matrix material carried by the gas ↑ Carrier gas Not drawn to scale CVI growth. Figure 2. [3]During chemical vapour infiltration, the fibrous preform is supported on a porous metallic plate through which a mixture of carrier gas along with matrix material is passed at an elevated temperature.
Plasma (argon-only on the left, argon and silane on the right) inside a prototype LEPECVD reactor at the LNESS laboratory in Como, Italy.. Low-energy plasma-enhanced chemical vapor deposition (LEPECVD) is a plasma-enhanced chemical vapor deposition technique used for the epitaxial deposition of thin semiconductor (silicon, germanium and SiGe alloys) films.
Plasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases.
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