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Aluminium nitride (Al N) is a solid nitride of aluminium. It has a high thermal conductivity of up to 321 W/(m·K) [ 5 ] and is an electrical insulator. Its wurtzite phase (w-AlN) has a band gap of ~6 eV at room temperature and has a potential application in optoelectronics operating at deep ultraviolet frequencies.
The relative permittivity (in older texts, dielectric constant) is the permittivity of a material expressed as a ratio with the electric permittivity of a vacuum. A dielectric is an insulating material, and the dielectric constant of an insulator measures the ability of the insulator to store electric energy in an electrical field.
The CRC Handbook of Chemistry and Physics is a comprehensive one-volume reference resource for science research. First published in 1914, it is currently (as of 2024 [update] ) in its 105th edition, published in 2024.
Another common term encountered for both absolute and relative permittivity is the dielectric constant which has been deprecated in physics and engineering [2] as well as in chemistry. [ 3 ] By definition, a perfect vacuum has a relative permittivity of exactly 1 whereas at standard temperature and pressure , air has a relative permittivity of ...
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
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Four pnictides, aluminium nitride (AlN), aluminium phosphide (AlP), aluminium arsenide (AlAs), and aluminium antimonide (AlSb), are known. They are all III-V semiconductors isoelectronic to silicon and germanium, all of which but AlN have the zinc blende structure. All four can be made by high-temperature (and possibly high-pressure) direct ...
The nitride content subtly raises the dielectric constant and is thought to offer other advantages, such as resistance against dopant diffusion through the gate dielectric. In 2000, Gurtej Singh Sandhu and Trung T. Doan of Micron Technology initiated the development of atomic layer deposition high-κ films for DRAM memory devices.