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Because base–emitter voltage varies as the logarithm of the base–emitter and collector–emitter currents, a BJT can also be used to compute logarithms and anti-logarithms. A diode can also perform these nonlinear functions but the transistor provides more circuit flexibility.
Figure 3: PNP version of the emitter-follower circuit, all polarities are reversed. A small voltage change on the input terminal will be replicated at the output (depending slightly on the transistor's gain and the value of the load resistance; see gain formula below).
A bipolar junction transistor (BJT) has terminals labeled base, collector and emitter. A small current at the base terminal, flowing between the base and the emitter, can control or switch a much larger current between the collector and emitter. A field-effect transistor (FET) has terminals labeled gate, source and drain. A voltage at the gate ...
For an NPN open emitter output, the collector is connected to the positive voltage rail, so the emitter outputs a high voltage when the transistor is on and is hi-Z when off. For a PNP open emitter output, the collector is connected to the low voltage supply, so the emitter outputs a low voltage when the transistor is on and is hi-Z when off.
The output transistor is not allowed to saturate (i.e. its base–collector junction must remain reverse-biased) because the first transistor, when saturated, establishes full (100%) parallel negative feedback between the collector and the base of the second transistor. [3] Since collector–emitter voltage is equal to the sum of its own base ...
In this circuit the emitter terminal of the transistor serves as the input, the collector as the output, and the base is connected to ground, or "common", hence its name. The analogous field-effect transistor circuit is the common-gate amplifier.
require a base-emitter voltage (V BE(on)) in the range of 0.55 to 0.7 volts for a collector current of 2 mA when the Collector voltage is 5 volts. [ 4 ] Will have a saturation voltage (V CE(sat) ) of at most 0.2 volts (typically 0.07 volts) at a collector current of 10 mA and a base current of 0.5 mA (when the base voltage is typically 0.73 ...
Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base junction, for example, increases the collector–base depletion width, thereby decreasing the width of the charge carrier portion of the ...
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