Search results
Results from the WOW.Com Content Network
You are free: to share – to copy, distribute and transmit the work; to remix – to adapt the work; Under the following conditions: attribution – You must give appropriate credit, provide a link to the license, and indicate if changes were made. You may do so in any reasonable manner, but not in any way that suggests the licensor endorses ...
A schematic diagram of the Ebers-Moll models of a PNP BJT. The base, collector and emitter currents are I B, I C and I E, the common-base forward and reverse current gains are α F and α R, and the collector and emitter diode currents are I CD and I ED. Date: 4 August 2010, 05:26 (UTC) Source: Ebers-Moll_Model_PNP.PNG; Author
Figure 3: PNP version of the emitter-follower circuit, all polarities are reversed. A small voltage change on the input terminal will be replicated at the output (depending slightly on the transistor's gain and the value of the load resistance; see gain formula below). This circuit is useful because it has a large input impedance
In a diode model two diodes are connected back-to-back to make a PNP or NPN bipolar junction transistor (BJT) equivalent. This model is theoretical and qualitative. This model is theoretical and qualitative.
The diagram shows a schematic representation of an NPN transistor connected to two voltage sources. (The same description applies to a PNP transistor with reversed directions of current flow and applied voltage.) This applied voltage causes the lower p–n junction to become forward biased, allowing a flow of electrons from the emitter into the ...
Date/Time Thumbnail Dimensions User Comment; current: 16:08, 31 August 2012: 720 × 720 (7 KB): Michael9422 {{subst:Upload marker added by en.wp UW}} {{Information |Description = {{en|A simple NPN transistor amplifier circuit diagram with transistor labels.}} |Source = I created a postscript file, and converted it too SVG using the pstoedit program. |Date = ...
Description: PNP transistor symbol with case (IEEE 315). Note: A little confusing on the BJT page, because the NPN is drawn with Collector (C) on the top, while here it is drawn on the bottom.
More complex circuit components can be created by further combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in the form n–p–n or p–n–p. Combinations of such semiconductor devices on a single chip allow for the creation of integrated circuits.