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LPDDR3 went mainstream in 2013, running at 800 MHz DDR (1600 MT/s), offering bandwidth comparable to PC3-12800 notebook memory in 2011 (12.8 GB/s of bandwidth). [11] To achieve this bandwidth, the controller must implement dual-channel memory. For example, this is the case for the Exynos 5 Dual [12] and the 5 Octa. [13]
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed
The first DDR4 memory module prototype was manufactured by Samsung and announced in January 2011. [a] Physical comparison of DDR, DDR2, DDR3, and DDR4 SDRAM Front and back of 8 GB [1] DDR4 memory modules. 2005: Standards body JEDEC began working on a successor to DDR3 around 2005, [14] about 2 years before the launch of DDR3 in 2007.
Same build as miniSD but greater capacity and transfer speed, 4 GB to 32 GB. 8 GB is largest in early-2011 (not compatible with older host devices). microSDHC: 2007 32 GB [4] Same build as microSD but greater capacity and transfer speed, 4 GB to 32 GB. [5] (not compatible with older host devices) SDXC: 2009 1 TB
It is for this reason that DDR3-2666 CL9 has a smaller absolute CAS latency than DDR3-2000 CL7 memory. Both for DDR3 and DDR4, the four timings described earlier are not the only relevant timings and give a very short overview of the performance of memory. The full memory timings of a memory module are stored inside of a module's SPD chip.
DDR should not be confused with dual channel, in which each memory channel accesses two RAM modules simultaneously. The two technologies are independent of each other and many motherboards use both, by using DDR memory in a dual channel configuration. An alternative to double or quad pumping is to make the link self-clocking.
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