Search results
Results from the WOW.Com Content Network
A memristor (/ ˈ m ɛ m r ɪ s t ər /; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage.It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor.
While the memristor is defined in terms of a two-terminal circuit element, there was an implementation of a three-terminal device called a memistor developed by Bernard Widrow in 1960. Memistors formed basic components of a neural network architecture called ADALINE developed by Widrow. [1] [2] The memistor was also used in MADALINE.
It is a combination of the memristor and transistor technology. [2] This technology is different from the 1T-1R approach since the devices are merged into one single entity. Multiple memristors can be embedded with a single transistor, enabling it to more accurately model a neuron with its multiple synaptic connections.
This can adversely affect the new wiki's search rankings, [115] potentially also resulting in outdated or incorrect information being present and viewed more often than the information on the new wiki. Fandom allows only a message directing viewers to a discussion about whether to fork for as long as the discussion is active before the message ...
Memristor is not simply a nonlinear device as this article and many other sources claim; instead, it is a conditionally nonlinear device. For example, in the case of an integrating memristor, if we wiggle rapidly the input quantity (AC input signal), the memristor does not change its resistance; so it behaves as a linear (ordinary, ohmic ...
This article lists American military electronic instruments/systems along with brief descriptions. This list specifically identifies electronic devices which are assigned designations according to the Joint Electronics Type Designation System, beginning with the AN/ prefix. They are grouped below by the first designation letter following this ...
The MNOS transistor device could be programmed through the application of a 50-volt forward or reverse bias between the gate and the channel to trap charges that would impact the threshold voltage of the transistor. Charge trap (CT) memory was introduced with MNOS devices in the late 1960s.
Development of 3D XPoint began around 2012. [8] Intel and Micron had developed other non-volatile phase-change memory (PCM) technologies previously; [note 1] Mark Durcan of Micron said 3D XPoint architecture differs from previous offerings of PCM, and uses chalcogenide materials for both selector and storage parts of the memory cell that are faster and more stable than traditional PCM ...