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The most common modern type of varistor is the metal-oxide varistor (MOV). This type contains a ceramic mass of zinc oxide (ZnO) grains, in a matrix of other metal oxides, such as small amounts of bismuth, cobalt, manganese oxides, sandwiched between two metal plates, which constitute the electrodes of the device.
LDMOS (laterally-diffused metal-oxide semiconductor) [1] is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p + silicon epitaxial layers.
They will also include high energy overvoltage MOV (Metal Oxide Varistor) protection, and circuit over-current protection in the form of a Polyswitch. [citation needed] Meters intended for testing in hazardous locations or for use on blasting circuits may require use of a manufacturer-specified battery to maintain their safety rating. [citation ...
A reference designator unambiguously identifies the location of a component within an electrical schematic or on a printed circuit board.The reference designator usually consists of one or two letters followed by a number, e.g. C3, D1, R4, U15.
GE's MOV was new in 1972 and fortuitously I stumbled across an article by 4 General Electric R&D people that sets forth how you get from "metal oxide" to "polycrystalline diodes-in-bulk" better than anything I knew before. The ref is: Metal-oxide varistor: a new way to suppress transients."
PMOS uses p-channel (+) metal-oxide-semiconductor field effect transistors (MOSFETs) to implement logic gates and other digital circuits. PMOS transistors operate by creating an inversion layer in an n-type transistor body. This inversion layer, called the p-channel, can conduct holes between p-type "source" and "drain" terminals.
A transient-voltage-suppression diode can respond to over-voltages faster than other common over-voltage protection components such as varistors or gas discharge tubes. The actual clamping occurs in roughly one picosecond, but in a practical circuit the inductance of the wires leading to the device imposes a higher limit. This makes transient ...
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