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All diodes exhibit this variable junction capacitance, but varactors are manufactured to exploit the effect and increase the capacitance variation. The figure shows an example of a cross section of a varactor with the depletion layer formed of a p–n junction. This depletion layer can also be made of a MOS or a Schottky diode.
In electronics, a step recovery diode (SRD, snap-off diode or charge-storage diode or memory varactor [a]) is a semiconductor junction diode with the ability to generate extremely short pulses. It has a variety of uses in microwave (MHz to GHz range) electronics as pulse generator or parametric amplifier .
The thickness of the depletion layer of a reverse-biased semiconductor diode varies with the DC voltage applied across the diode. Any diode exhibits this effect (including p/n junctions in transistors), but devices specifically sold as variable capacitance diodes (also called varactors or varicaps ) are designed with a large junction area and a ...
Parametric oscillators are used in several areas of physics. The classical varactor parametric oscillator consists of a semiconductor varactor diode connected to a resonant circuit or cavity resonator. It is driven by varying the diode's capacitance by applying a varying bias voltage. The circuit that varies the diode's capacitance is called ...
Various semiconductor diodes. Left: A four-diode bridge rectifier.Next to it is a 1N4148 signal diode.On the far right is a Zener diode.In most diodes, a white or black painted band identifies the cathode into which electrons will flow when the diode is conducting.
A resonant-tunneling diode (RTD) is a diode with a resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions. All types of tunneling diodes make use of quantum mechanical tunneling. Characteristic ...
A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, in the detection of ...
A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony .