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Spin-transfer torque can be used to flip the active elements in magnetic random-access memory. Spin-transfer torque magnetic random-access memory (STT-RAM or STT-MRAM) is a non-volatile memory with near-zero leakage power consumption which is a major advantage over charge-based memories such as SRAM and DRAM.
March — Samsung commence commercial production of its first embedded STT-MRAM based on a 28 nm process. [64] May — Avalanche partners with United Microelectronics Corporation to jointly develop and produce embedded MRAM based on the latter's 28 nm CMOS manufacturing process. [65] 2020 December — IBM announces a 14 nm MRAM node. [66] 2021
Everspin Technologies, Inc. is a publicly traded semiconductor company headquartered in Chandler, Arizona, United States.It develops and manufactures discrete magnetoresistive RAM or magnetoresistive random-access memory (MRAM) products, including Toggle MRAM and Spin-Transfer Torque MRAM (STT-MRAM) product families. [2]
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Data reliability is guaranteed in F-RAM even in a high magnetic field environment compared to MRAM. Cypress Semiconductor's [16] F-RAM devices are immune to the strong magnetic fields and do not show any failures under the maximum available magnetic field strengths (3,700 Gauss for horizontal insertion and 2,000 Gauss for vertical insertion ...
TMR, or more specifically the magnetic tunnel junction, is also the basis of MRAM, a new type of non-volatile memory. The 1st generation technologies relied on creating cross-point magnetic fields on each bit to write the data on it, although this approach has a scaling limit at around 90–130 nm. [10]