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A reference designator unambiguously identifies the location of a component within an electrical schematic or on a printed circuit board.The reference designator usually consists of one or two letters followed by a number, e.g. C3, D1, R4, U15.
LDMOS (laterally-diffused metal-oxide semiconductor) [1] is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p + silicon epitaxial layers.
An electronic symbol is a pictogram used to represent various electrical and electronic devices or functions, such as wires, batteries, resistors, and transistors, in a schematic diagram of an electrical or electronic circuit. These symbols are largely standardized internationally today, but may vary from country to country, or engineering ...
In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage. Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits.
The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. [1] Its numbering follows the JEDEC standard. [2] It is a transistor type of enduring popularity. [3] [4] [5]
The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...
Size comparison of BJT transistor packages, from left to right: SOT-23, TO-92, TO-126, TO-3. The case is molded around the transistor elements in two parts; the face is flat, usually bearing a machine-printed part number (some early examples had the part number printed on the top surface instead). The back is semi-circularly-shaped.
The 2N7000 has been referred to as a "FETlington" and as an "absolutely ideal hacker part." [3] The word "FETlington" is a reference to the Darlington-transistor-like saturation characteristic.
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