Search results
Results from the WOW.Com Content Network
A Class B push–pull output driver using a pair of complementary PNP and NPN bipolar junction transistors configured as emitter followers. A push–pull amplifier is a type of electronic circuit that uses a pair of active devices that alternately supply current to, or absorb current from, a connected load.
Ebers–Moll model for an NPN transistor. [28] I B, I C and I E are the base, collector and emitter currents; I CD and I ED are the collector and emitter diode currents; α F and α R are the forward and reverse common-base current gains. Ebers–Moll model for a PNP transistor Approximated Ebers–Moll model for an NPN transistor in the ...
Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]
Figure 1: Basic NPN common collector circuit (neglecting biasing details). In electronics, a common collector amplifier (also known as an emitter follower) is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a voltage buffer.
Sziklai pair that acts like a single NPN transistor with collector C, emitter E, and base B. In electronics , the Sziklai pair , also known as a complementary feedback pair , is a configuration of two bipolar transistors , similar to a Darlington pair . [ 1 ]
in parallel with the collector–emitter junction of the transistor. This resistor can thus account for the finite output resistance of a simple current mirror or an actively loaded common-emitter amplifier. In keeping with the model used in SPICE and as discussed above using the resistance becomes:
The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...
[8] [11] [12] In 1957 Frosch and Derick published their work on building the first silicon dioxide transistors, including a NPNP transistor, the same structure as the IGBT. [13] The basic IGBT mode of operation, where a pnp transistor is driven by a MOSFET, was first proposed by K. Yamagami and Y. Akagiri of Mitsubishi Electric in the Japanese ...