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A Class B push–pull output driver using a pair of complementary PNP and NPN bipolar junction transistors configured as emitter followers. A push–pull amplifier is a type of electronic circuit that uses a pair of active devices that alternately supply current to, or absorb current from, a connected load.
Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]
Ebers–Moll model for an NPN transistor. [28] I B, I C and I E are the base, collector and emitter currents; I CD and I ED are the collector and emitter diode currents; α F and α R are the forward and reverse common-base current gains. Ebers–Moll model for a PNP transistor Approximated Ebers–Moll model for an NPN transistor in the ...
Figure 1: Basic NPN common collector circuit (neglecting biasing details). In electronics , a common collector amplifier (also known as an emitter follower ) is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies , typically used as a voltage buffer .
This allows parallel operation of multiple followers into a common load. [9] [12] The offset may be practically nulled by augmenting each of the four transistors with a diode-wired transistor of the opposite polarity, e.g. wiring a pnp diode in series with the base-emitter junction of a pnp transistor, and vice versa. [22]
Sziklai pair that acts like a single NPN transistor with collector C, emitter E, and base B. In electronics , the Sziklai pair , also known as a complementary feedback pair , is a configuration of two bipolar transistors , similar to a Darlington pair . [ 1 ]
The 2N3904 is an NPN transistor that can only switch one-third the current of the 2N2222 but has otherwise similar characteristics. The 2N3904 exhibits its forward gain (beta) peak at a lower current than the 2N2222, and is useful in amplifier applications with reduced I c , e.g., (gain peak at 10 mA for the 2N3904 but 150 mA for the 2N2222).
The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...