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The Monte Carlo method for electron transport is a semiclassical Monte Carlo (MC) approach of modeling semiconductor transport. Assuming the carrier motion consists of free flights interrupted by scattering mechanisms, a computer is utilized to simulate the trajectories of particles as they move across the device under the influence of an electric field using classical mechanics.
Characterization of transport properties requires fabricating a device and measuring its current-voltage characteristics. Devices for transport studies are typically fabricated by thin film deposition or break junctions. The dominant transport mechanism in a measured device can be determined by differential conductance analysis.
The electron–hole pair is the fundamental unit of generation and recombination in inorganic semiconductors, corresponding to an electron transitioning between the valence band and the conduction band where generation of an electron is a transition from the valence band to the conduction band and recombination leads to a reverse transition.
Then the electron mobility μ is defined as =. Electron mobility is almost always specified in units of cm 2 /(V⋅s). This is different from the SI unit of mobility, m 2 /(V⋅s). They are related by 1 m 2 /(V⋅s) = 10 4 cm 2 /(V⋅s). Conductivity is proportional to the product of mobility and carrier concentration. For example, the same ...
Diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (electrons and/or electron holes).This is the current which is due to the transport of charges occurring because of non-uniform concentration of charged particles in a semiconductor.
Electromigration is the transport of material caused by the gradual movement of the ions in a conductor due to the momentum transfer between conducting electrons and diffusing metal atoms. The effect is important in applications where high direct current densities are used, such as in microelectronics and related structures.
where g s = 2, due to spin degeneracy, e is the electron charge, h is the Planck constant, and are the Fermi levels of A and B, M(E) is the number of propagating modes in the channel, f′(E) is the deviation from the equilibrium electron distribution (perturbation), and T(E) is the transmission probability (T = 1 for ballistic).
The term "hot electron" comes from the effective temperature term used when modelling carrier density (i.e., with a Fermi-Dirac function) and does not refer to the bulk temperature of the semiconductor (which can be physically cold, although the warmer it is, the higher the population of hot electrons it will contain all else being equal).