Ad
related to: introduction to focused ion beams- Electron Beam Evaporation
Time-Tested Deposition Technology
For Producing High Purity Coatings
- Thermal Evaporation
Physical Vapor Deposition Technique
Used To Form Thin Film Coatings
- Ion Beam Processing
This Process Is Critical To High
Performance Thin Film Application
- Magnetron Sputtering
Plasma Based Deposition In Which
Ions Are Accelerated Toward Target
- Electron Beam Evaporation
Search results
Results from the WOW.Com Content Network
For a minimal introduction of stress and bending to transmission electron microscopy (TEM) samples (lamellae, thin films, and other mechanically and beam sensitive samples), when transferring inside a focused ion beam (FIB), flexible metallic nanowires can be attached to a typically rigid micromanipulator.
An ion beam is a beam of ions, a type of charged particle beam. Ion beams have many uses in electronics manufacturing (principally ion implantation) and other industries. There are many ion beam sources, some derived from the mercury vapor thrusters developed by NASA in the 1960s. The most widely used ion beams are of singly-charged ions.
The ion beam is produced from a plasma that has been confined within a volume. Ions of a particular energy are extracted, accelerated, collimated and/or focused. The ion gun is composed of an ion source, extraction grid structure and a collimation/lensing structure.
Ion beam analysis works on the basis that ion-atom interactions are produced by the introduction of ions to the sample being tested. Major interactions result in the emission of products that enable information regarding the number, type, distribution and structural arrangement of atoms to be collected.
Ion-beam lithography, or ion-projection lithography, is similar to Electron beam lithography, but uses much heavier charged particles, ions. In addition to diffraction being negligible, ions move in straighter paths than electrons do both through vacuum and through matter, so there seems be a potential for very high resolution.
The Electron beam ion trap (EBIT), based on the same principle, can produce up to bare uranium ions and can be used as an ion source as well. Heavy ions can also be generated with an ion gun which typically uses the thermionic emission of electrons to ionize a substance in its gaseous state.
FEI's introduction of the liquid metal ion source in 1981 led to its application in the semiconductor industry for mask repair and defect analysis. [5] The current company was formed by the 1997 merger between FEI and Philips Electron Optics, [6] and the 1999 acquisition of ion beam company Micrion.
The electron beam is focused by a thick magnetic lens. In a sharp crossover, the electron current density can reach values, which significantly exceed that for the Brillouin focusing of laminar flow of electrons. [5] The extraction of ions from the ion source can be realized in both axial and radial directions.
Ad
related to: introduction to focused ion beams