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He also presented a Ka band low-noise amplifier in 90-nm CMOS technology, achieving 19 dB peak gain and 3 dB noise figure. It featured a thin-film microstrip line and gain-boosting circuits, resulting in a 20% gain improvement and 27% noise reduction with low power consumption and compact size. [13]
A low-noise amplifier (LNA) is an electronic component that amplifies a very low-power signal without significantly degrading its signal-to-noise ratio (SNR). Any electronic amplifier will increase the power of both the signal and the noise present at its input, but the amplifier will also introduce some additional noise.
With Michiel Steyaert, Sansen demonstrated a CMOS low-power, low-noise monolithic instrumentation amplifier (IA) designed for medical applications, utilizing current feedback and single-stage operational transconductance amplifiers in the low-frequency loop, with variable gains controlled by software in the range of 14/20/26/40 dB for a ...
In high performance CMOS (complementary metal–oxide–semiconductor) amplifier circuits, transistors are not only used to amplify the signal but are also used as active loads to achieve higher gain and output swing in comparison with resistive loads. [1] [2] [3] CMOS technology was introduced primarily for digital circuit design.
CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
Bipolar transistors offer high speed, high gain, and low output impedance with relatively high power consumption per device, which are excellent properties for high-frequency analog amplifiers including low noise radio frequency (RF) amplifiers that only use a few active devices, while CMOS technology offers high input impedance and is ...
The design goals also differ from the emphasis on overall high gain as described above for low-frequency design. In high frequency circuits, impedance matching at the input and output of the amplifier is typically desired in order to eliminate signal reflections and maximize power gain.
His contributions include the first digital-pixel CMOS image sensor in 1994; the first scientific linear CMOS image sensor with single-electron RMS read noise in 2003; the first multi-megapixel scientific area CMOS image sensor with simultaneous high dynamic range (86 dB), fast readout (100 frames/second) and ultra-low read noise (1.2e- RMS ...
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