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Because silicon dioxide is a native oxide of silicon it is more widely used compared to other semiconductors like gallium arsenide or indium phosphide. Silicon dioxide could be grown on a silicon semiconductor surface. [46] Silicon oxide layers could protect silicon surfaces during diffusion processes, and could be used for diffusion masking ...
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
Silicon dioxide; From a chemical formula: This is a redirect from a chemical/molecular formula to its systematic (technical) or trivial name.
Note that the especially high molar values, as for paraffin, gasoline, water and ammonia, result from calculating specific heats in terms of moles of molecules. If specific heat is expressed per mole of atoms for these substances, none of the constant-volume values exceed, to any large extent, the theoretical Dulong–Petit limit of 25 J⋅mol ...
A silicon–oxygen bond (Si−O bond) is a chemical bond between silicon and oxygen atoms that can be found in many inorganic and organic compounds. [1] In a silicon–oxygen bond, electrons are shared unequally between the two atoms, with oxygen taking the larger share due to its greater electronegativity.
Gate oxide at NPNP transistor made by Frosch and Derrick, 1957 [1]. The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET (metal–oxide–semiconductor field-effect transistor) from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on.
Silicon monoxide is the chemical compound with the formula SiO where silicon is present in the oxidation state +2. In the vapour phase, it is a diatomic molecule. [1] It has been detected in stellar objects [2] and has been described as the most common oxide of silicon in the universe.
An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such as silicon or germanium is formed on an insulator layer which may be a buried oxide (BOX) layer formed in a semiconductor substrate. [8] [9] [10] SOI MOSFET devices are adapted for use by the computer industry.