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MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
SOT: Small-outline transistor (also SOT-23, SOT-223, SOT-323). TO-XX: wide range of small pin count packages often used for discrete parts like transistors or diodes. TO-3: Panel-mount with leads; TO-5: Metal can package with radial leads; TO-18: Metal can package with radial leads; TO-39; TO-46; TO-66: Similar shape to the TO-3 but smaller
In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.
The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. [1] Its numbering follows the JEDEC standard. [2] It is a transistor type of enduring popularity. [3] [4] [5]
Size comparison of BJT transistor packages, from left to right: SOT-23, TO-92, TO-126, TO-3. The case is molded around the transistor elements in two parts; the face is flat, usually bearing a machine-printed part number (some early examples had the part number printed on the top surface instead). The back is semi-circularly-shaped.
Transistor in a TO-5 package with 25 mm leads. Gear-shaped heat sinks for TO-5 packages.. In electronics, TO-5 (Transistor Outline 5) is a designation for a standardized metal semiconductor package used for transistors and some integrated circuits.
The N version datasheet has a note regarding the Transmitter Data Register Empty flag: "The W65C51N loads the Transmitter Data Register (TDR) and Transmitter Shift Register (TSR) at the same time. A delay should be used to insure that the shift register is empty before the TDR/TSR is reloaded.
Size comparison of BJT transistor packages, from left to right: SOT-23, TO-92, TO-126, TO-3 3D model of TO-3 package. In electronics, TO-3 is a designation for a standardized metal semiconductor package used for power semiconductors, including transistors, silicon controlled rectifiers, and, integrated circuits.
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