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  2. Synchronous dynamic random-access memory - Wikipedia

    en.wikipedia.org/wiki/Synchronous_dynamic_random...

    Also, an extra bank address pin (BA2) was added to allow eight banks on large RAM chips. Typical DDR2 SDRAM clock rates are 200, 266, 333 or 400 MHz (periods of 5, 3.75, 3 and 2.5 ns), generally described as DDR2-400, DDR2-533, DDR2-667 and DDR2-800 (periods of 2.5, 1.875, 1.5 and 1.25 ns).

  3. DDR SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR_SDRAM

    The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed

  4. DDR4 SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR4_SDRAM

    DDR4 memory is supplied in 288-pin dual in-line memory modules (DIMMs), similar in size to 240-pin DDR3 DIMMs. DDR4 RAM modules feature pins that are spaced more closely at 0.85 mm compared to the 1.0 mm spacing in DDR3, allowing for a higher pin density within the same standard DIMM length of 133.35 mm (5¼ inches).

  5. Serial presence detect - Wikipedia

    en.wikipedia.org/wiki/Serial_presence_detect

    Basic memory type (7 = DDR SDRAM) 3: 0x03: Bank 2 row address bits (0–15) Bank 1 row address bits (1–15) Bank 2 is 0 if same as bank 1. 4: 0x04: Bank 2 column address bits (0–15) Bank 1 column address bits (1–15) Bank 2 is 0 if same as bank 1. 5: 0x05: Number of RAM banks on module (1–255) Commonly 1 or 2 6: 0x06: Module data width ...

  6. Memory module - Wikipedia

    en.wikipedia.org/wiki/Memory_module

    From top to bottom: DIP, SIPP, SIMM (30‑pin), SIMM (72‑pin), DIMM (168‑pin), DDR DIMM (184‑pin). 16 GiB DDR4-2666 288-pin 1.2 V UDIMMs Dynamic random access memory is produced as integrated circuits (ICs) bonded and mounted into plastic packages with metal pins for connection to control signals and buses.

  7. DDR5 SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR5_SDRAM

    A third bank group bit (BG2) was added, allowing up to eight bank groups (2 → 3). The maximum number of banks per bank group remains at four (2 → 2), The number of row address bits remains at 17, for a maximum of 128K rows (17 → 17). One more column address bit (C10) is added, allowing up to 8192 columns (1 KB pages) in ×4 chips (11 → 12).

  8. LPDDR - Wikipedia

    en.wikipedia.org/wiki/LPDDR

    The standard defines SDRAM packages containing two independent 16-bit access channels, each connected to up to two dies per package. Each channel is 16 data bits wide, has its own control/address pins, and allows access to 8 banks of DRAM. Thus, the package may be connected in three ways:

  9. Template:Three-digit ZIP Code table - Wikipedia

    en.wikipedia.org/wiki/Template:Three-digit_ZIP...

    This page was last edited on 16 December 2019, at 06:17 (UTC).; Text is available under the Creative Commons Attribution-ShareAlike 4.0 License; additional terms may apply.

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