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However, mobility is much more commonly expressed in cm 2 /(V⋅s) = 10 −4 m 2 /(V⋅s). Mobility is usually a strong function of material impurities and temperature, and is determined empirically. Mobility values are typically presented in table or chart form. Mobility is also different for electrons and holes in a given material.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
The carrier density is important for semiconductors, where it is an important quantity for the process of chemical doping.Using band theory, the electron density, is number of electrons per unit volume in the conduction band.
In semiconductor lasers, the carrier lifetime is the time it takes an electron before recombining via non-radiative processes in the laser cavity. In the frame of the rate equations model , carrier lifetime is used in the charge conservation equation as the time constant of the exponential decay of carriers.
Generally, the carrier mobility μ depends on temperature T, on the applied electric field E, and the concentration of localized states N. Depending on the model, increased temperature may either increase or decrease carrier mobility, applied electric field can increase mobility by contributing to thermal ionization of trapped charges, and ...
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
The proportionality constant is known as mobility of the carrier, which is a material property. A good conductor would have a high mobility value for its charge carrier, which means higher velocity, and consequently higher current values for a given electric field strength. There is a limit though to this process and at some high field value, a ...
Diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (electrons and/or electron holes).This is the current which is due to the transport of charges occurring because of non-uniform concentration of charged particles in a semiconductor.