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  2. Linear amplifier - Wikipedia

    en.wikipedia.org/wiki/Linear_amplifier

    Class-D amplifiers use switching technology to achieve high efficiency, often exceeding 90%, thereby requiring less power to operate, compared with that of other amplifier types. Because of the digital train used to drive the amplifier, many do not consider the Class-D amplifier a linear amplifier, yet many audio and radio manufacturers have ...

  3. RF power amplifier - Wikipedia

    en.wikipedia.org/wiki/RF_power_amplifier

    Generally speaking, solid-state power amplifiers contain four main components: input, output, amplification stage and power supply. [8] MOSFET transistors and other modern solid-state devices have replaced vacuum tubes in most electronic devices, but tubes are still used in some high-power transmitters (see Valve RF amplifier). Although ...

  4. LDMOS - Wikipedia

    en.wikipedia.org/wiki/LDMOS

    The silicon-based RF LDMOS (radio-frequency LDMOS) is the most widely used RF power amplifier in mobile networks, [2] [3] [4] enabling the majority of the world's cellular voice and data traffic. [5] LDMOS devices are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to ...

  5. McIntosh MC-2300 - Wikipedia

    en.wikipedia.org/wiki/McIntosh_MC-2300

    The McIntosh MC-2300 is a solid-state power amplifier which was built by the American high-end audio company McIntosh Laboratory between 1971 and 1980. [1] Jerry Garcia in 1987 with an MC-2300 in the lower-right corner of the picture. McIntosh produced the MC-2105 (with blue meters) and the MC-2100 (without) between 1969 and 1977.

  6. SSPA - Wikipedia

    en.wikipedia.org/wiki/SSPA

    State Secrets Protection Act, a bill proposed in the U.S. Congress in 2008 Solid State Power Amplifier, a type of RF power amplifier that contains only solid-state (semiconductor) active devices See also

  7. Yaesu FT-One - Wikipedia

    en.wikipedia.org/wiki/Yaesu_FT-One

    The receiver is filtered by a 22 pole crystal filter with switchable extra 8 and 6 pole narrow band CW filters, a 14 pole SSB filter and a separate 14 pole CW filter. The RF circuit is based on a – manually or automatically – microprocessor controlled PIN diode attenuator with 2 bipolar power transistors used as a high level RF amplifier in the receive mode and as a double RF output pre ...

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