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Intel's 45nm process has a transistor density of 3.33 million transistors per square milimeter (MTr/mm2). [ 5 ] AMD released its Sempron II , Athlon II , Turion II and Phenom II (in generally increasing order of performance), as well as Shanghai Opteron processors using 45 nm process technology in late 2008.
45nm NOR flash memory example of data retention varying with temperatures. Data stored on flash cells is steadily lost due to electron detrapping [definition needed]. The rate of loss increases exponentially as the absolute temperature increases. For example: For a 45 nm NOR flash, at 1000 hours, the threshold voltage (Vt) loss at 25°C is ...
Charge trap flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory. It is a type of floating-gate MOSFET memory technology , but differs from the conventional floating-gate technology in that it uses a silicon nitride film to store electrons rather than the doped polycrystalline silicon typical ...
DataFlash is a low pin-count serial interface for flash memory. It was developed as an Atmel proprietary interface, compatible with the SPI standard. In October 2012, the AT45 series DataFlash product lines, related intellectual property, and supporting employee teams were purchased by Adesto Technologies. [1] [2]
For example, a 25 nm half-pitch pattern can be generated from interleaving two 50 nm half-pitch patterns, three 75 nm half-pitch patterns, or four 100 nm half-pitch patterns. The feature size reduction will most likely require the assistance of techniques such as chemical shrinks, thermal reflow, or shrink assist films.
Flash memory was invented by Fujio Masuoka at Toshiba in 1980. [30] [31] Masuoka and his colleagues presented the invention of NOR flash in 1984, [32] and then NAND flash in 1987. [33] Multi-level cell (MLC) flash memory was introduced by NEC, which demonstrated quad-level cells in a 64 Mb flash chip storing 2-bit per cell in 1996.
The "32 nm" node is the step following the "45 nm" process in CMOS semiconductor device fabrication. "32-nanometre" refers to the average half-pitch (i.e., half the distance between identical features) of a memory cell at this technology level. Toshiba produced commercial 32 GiB NAND flash memory chips with the "32 nm" process in 2009. [1]
The PlayStation 3 Memory Card Adaptor is a device that allows data to be transferred from PlayStation and PlayStation 2 memory cards to the PlayStation 3's hard disk. The device has a cable that connects to the PS3's USB port on one end, and features a legacy PS2 memory card port on the other end.