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  2. Gate turn-off thyristor - Wikipedia

    en.wikipedia.org/wiki/Gate_turn-off_thyristor

    A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power (e.g. 1200 V AC) semiconductor device. It was invented by General Electric . [ 1 ] GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their gate lead.

  3. Emitter turn off thyristor - Wikipedia

    en.wikipedia.org/wiki/Emitter_turn_off_thyristor

    An ETO is turned ON by applying positive voltages to gates, gate 1, and gate 2. When a positive voltage is applied to gate 2, it turns on the MOSFET that is connected in series with the cathode terminal of the PNPN thyristor structure. The positive voltage applied to gate 1 turns off the MOSFET connected to the gate terminal of the thyristor. [1]

  4. Power semiconductor device - Wikipedia

    en.wikipedia.org/wiki/Power_semiconductor_device

    When a gate pulse is present, the device operates like a standard diode. When the anode is negative compared to the cathode, the device turns off and blocks positive or negative voltages present. The gate voltage does not allow the device to turn off. [19] Up to 3000 amperes, 5000 volts in a single silicon device. Thyristor

  5. Integrated gate-commutated thyristor - Wikipedia

    en.wikipedia.org/wiki/Integrated_gate-commutated...

    The wafer device is similar to a gate turn-off thyristor (GTO). They can be turned on and off by a gate signal, and withstand higher rates of voltage rise (dv/dt), such that no snubber is required for most applications. The structure of an IGCT is very similar to a GTO thyristor. In an IGCT, the gate turn-off current is greater than the anode ...

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  7. NSB Di 8 - Wikipedia

    en.wikipedia.org/wiki/NSB_Di_8

    In comparison to the NS 6400 and DE 1002, the Di 8s are 3.0 meters (9.8 ft) (NS) and 4.4 meters (14 ft) longer. The electrical transmission system saw ABB systems replaced by Siemens and the installation of GTO and IGBT systems. The power output was significantly improved, from between 1,120 and 1,380 kilowatts (1,500 and 1,850 hp).

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