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A 64 bit memory chip die, the SP95 Phase 2 buffer memory produced at IBM mid-1960s, versus memory core iron rings 8GB DDR3 RAM stick with a white heatsink Random-access memory ( RAM ; / r æ m / ) is a form of electronic computer memory that can be read and changed in any order, typically used to store working data and machine code .
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
Eroom's law – is a pharmaceutical drug development observation that was deliberately written as Moore's Law spelled backward in order to contrast it with the exponential advancements of other forms of technology (such as transistors) over time. It states that the cost of developing a new drug roughly doubles every nine years.
RAM with an access time of 70 ns will output valid data within 70 ns from the time that the address lines are valid. Some SRAM cells have a page mode, where words of a page (256, 512, or 1024 words) can be read sequentially with a significantly shorter access time (typically approximately 30 ns). The page is selected by setting the upper ...
The operating system will place actively used data in RAM, which is much faster than hard disks. When the amount of RAM is not sufficient to run all the current programs, it can result in a situation where the computer spends more time moving data from RAM to disk and back than it does accomplishing tasks; this is known as thrashing.
RDRAM was controversial during its widespread use by Intel for having high licensing fees, high cost, being a proprietary standard, and low performance advantages for the increased cost. RDRAM and DDR SDRAM were involved in a standards war. PC-800 RDRAM operated at 400 MHz and delivered 1600 MB/s of bandwidth over a 16-bit bus.
AMAT's three parameters hit time (or hit latency), miss rate, and miss penalty provide a quick analysis of memory systems. Hit latency (H) is the time to hit in the cache. Miss rate (MR) is the frequency of cache misses, while average miss penalty (AMP) is the cost of a cache miss in terms of time. Concretely it can be defined as follows.
Consequently, the proportion of die allocated to the memory array itself has decreased over time: from 70–78% for SDRAM and DDR1 to 47% for DDR2, 38% for DDR3, and potentially less than 30% for DDR4. [46] The specification defined standards for ×4, ×8 and ×16 memory devices with capacities of 2, 4, 8 and 16 Gbit. [1] [47]