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Amorphous silicon (a-Si) is the non-crystalline form of silicon used for solar cells and thin-film transistors in LCDs.. Used as semiconductor material for a-Si solar cells, or thin-film silicon solar cells, it is deposited in thin films onto a variety of flexible substrates, such as glass, metal and plastic.
Polycrystalline silicon, or multicrystalline silicon, also called polysilicon, poly-Si, or mc-Si, is a high purity, polycrystalline form of silicon, used as a raw material by the solar photovoltaic and electronics industry. Polysilicon is produced from metallurgical grade silicon by a chemical purification process, called the Siemens process.
Thin-film solar cells, a second generation of photovoltaic (PV) solar cells: Top: thin-film silicon laminates being installed onto a roof. Middle: CIGS solar cell on a flexible plastic backing and rigid CdTe panels mounted on a supporting structure Bottom: thin-film laminates on rooftops Thin-film solar cells are a type of solar cell made by depositing one or more thin layers (thin films or ...
As a material transitions from the amorphous state to the fully crystalline state, the broad maximum sharpens up and other sharp peaks start to appear in the n(λ) and k(λ) spectra. This is demonstrated for the case of amorphous silicon progressing to poly-silicon and further progressing to crystalline silicon.
Polycrystalline silicon (p-Si) is a pure and conductive form of the element composed of many crystallites, or grains of highly ordered crystal lattice.In 1984, studies showed that amorphous silicon (a-Si) is an excellent precursor for forming p-Si films with stable structures and low surface roughness. [2]
Amorphous silicon is the most well-developed thin film technology to-date. An amorphous silicon (a-Si) solar cell is made of non-crystalline or microcrystalline silicon. Amorphous silicon has a higher bandgap (1.7 eV) than crystalline silicon (c-Si) (1.1 eV), which means it absorbs the visible part of the solar spectrum more strongly than the ...
The aluminum that diffuses into the amorphous silicon is believed to weaken the hydrogen bonds present, allowing crystal nucleation and growth. [48] Experiments have shown that polycrystalline silicon with grains on the order of 0.2–0.3 μm can be produced at temperatures as low as 150 °C.
The reasons for this surge of interest are manifold. The performance of OFETs, which can compete with that of amorphous silicon (a-Si) TFTs with field-effect mobilities of 0.5–1 cm 2 V −1 s −1 and ON/OFF current ratios (which indicate the ability of the device to shut down) of 10 6 –10 8, has improved significantly.