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Amorphous silicon (a-Si) is the non-crystalline form of silicon used for solar cells and thin-film transistors in LCDs.. Used as semiconductor material for a-Si solar cells, or thin-film silicon solar cells, it is deposited in thin films onto a variety of flexible substrates, such as glass, metal and plastic.
As a material transitions from the amorphous state to the fully crystalline state, the broad maximum sharpens up and other sharp peaks start to appear in the n(λ) and k(λ) spectra. This is demonstrated for the case of amorphous silicon progressing to poly-silicon and further progressing to crystalline silicon.
A reported silicon phosphide is Si 12 P 5 (no practical applications), [89] [90] formed by annealing an amorphous Si-P alloy. The arsenic–silicon phase diagram measured at 40 Bar has two phases: SiAs and SiAs 2. [91] The antimony–silicon system comprises a single eutectic close to the melting point of Sb. [92] The bismuth system is a ...
Thin-film solar cells, a second generation of photovoltaic (PV) solar cells: Top: thin-film silicon laminates being installed onto a roof. Middle: CIGS solar cell on a flexible plastic backing and rigid CdTe panels mounted on a supporting structure Bottom: thin-film laminates on rooftops Thin-film solar cells are a type of solar cell made by depositing one or more thin layers (thin films or ...
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
The aluminum that diffuses into the amorphous silicon is believed to weaken the hydrogen bonds present, allowing crystal nucleation and growth. [48] Experiments have shown that polycrystalline silicon with grains on the order of 0.2–0.3 μm can be produced at temperatures as low as 150 °C.
After early experimentation with different gate materials using aluminum, molybdenum and amorphous silicon, the semiconductor industry almost universally adopted self-aligned gates made with polycrystalline silicon (poly-silicon), the so-called silicon-gate technology (SGT) or "self-aligned silicon-gate" technology, which had many additional ...
Polycrystalline silicon (p-Si) is a pure and conductive form of the element composed of many crystallites, or grains of highly ordered crystal lattice.In 1984, studies showed that amorphous silicon (a-Si) is an excellent precursor for forming p-Si films with stable structures and low surface roughness. [2]