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The saturation current (or scale current), more accurately the reverse saturation current, is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage.
Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]
The effect of reverse saturation current on the I-V curve of a crystalline silicon solar cell are shown in the figure to the right. Physically, reverse saturation current is a measure of the "leakage" of carriers across the p–n junction in reverse bias.
is the reverse saturation current, the current that flows when the diode is reverse biased (that is, is large and negative). n {\displaystyle n} is an ideality factor introduced to model a slower rate of increase than predicted by the ideal diode law.
Varying the current in the control winding moves the operating point up and down on the saturation curve, controlling the alternating current through the inductor. These are used in variable fluorescent light ballasts, and power control systems. [11] Saturation is also exploited in fluxgate magnetometers and fluxgate compasses.
Photocurrent is the electric current through a photosensitive device, such as a photodiode, as the result of exposure to radiant power.The photocurrent may occur as a result of the photoelectric, photoemissive, or photovoltaic effect.
The theory is similar to that of a single probe, except that the current is limited to the ion saturation current for both positive and negative voltages. In particular, if V b i a s {\displaystyle V_{bias}} is the voltage applied between two identical electrodes, the current is given by;
In the velocity-saturation regime, this equation takes the following form = Note the different dependence of on between the Mott–Gurney law and the equation describing the current in the velocity-saturation regime. In the ballistic case (assuming no collisions), the Mott–Gurney equation takes the form of the more familiar Child–Langmuir law.