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A memristor (/ ˈ m ɛ m r ɪ s t ər /; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage.It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor.
Stan Williams of HP Labs also argued that ReRAM was a memristor. [21] However, others challenged this terminology and the applicability of memristor theory to any physically realizable device is open to question. [22] [23] [24] Whether redox-based resistively switching elements (ReRAM) are covered by the current memristor theory is disputed. [25]
In one of the technical reports [3] the memistor was described as follows: . Like the transistor, the memistor is a 3-terminal element. The conductance between two of the terminals is controlled by the time integral of the current in the third, rather than its instantaneous value as in the transistor.
In electronics, cut-off is a state of negligible conduction that is a property of several types of electronic components when a control parameter (that usually is a well-defined voltage or electric current, but could also be an incident light intensity or a magnetic field), is lowered or increased past a value (the conduction threshold).
Often the isolation capabilities are inferior to the use of transistors if the on/off ratio for the selector is not sufficient, limiting the ability to operate very large arrays in this architecture. Chalcogenide-based threshold switches have been demonstrated as a viable selector for high-density PCM arrays [22]
The main determinant of a memory system's cost is the density of the components used to make it up. Smaller components, and fewer of them, mean that more "cells" can be packed onto a single chip, which in turn means more can be produced at once from a single silicon wafer.
The reasons for this surge of interest are manifold. The performance of OFETs, which can compete with that of amorphous silicon (a-Si) TFTs with field-effect mobilities of 0.5–1 cm 2 V −1 s −1 and ON/OFF current ratios (which indicate the ability of the device to shut down) of 10 6 –10 8, has improved significantly.
Eye diagram showing an example of two power levels in an OOK modulation scheme, which can be used to calculate extinction ratio. P 1 and P 0 are represented by (binary 1) and (binary 0) respectively. In telecommunications, extinction ratio (r e) is the ratio of two optical power levels of a digital signal generated by an optical source, e.g., a ...