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A crystallographic defect is an interruption of the regular patterns of arrangement of atoms or molecules in crystalline solids. The positions and orientations of particles, which are repeating at fixed distances determined by the unit cell parameters in crystals, exhibit a periodic crystal structure , but this is usually imperfect.
In crystallography, a vacancy is a type of point defect in a crystal where an atom is missing from one of the lattice sites. [2] Crystals inherently possess imperfections, sometimes referred to as crystallographic defects. Vacancies occur naturally in all crystalline materials.
Stacking faults are two dimensional planar defects that can occur in crystalline materials. They can be formed during crystal growth, during plastic deformation as partial dislocations move as a result of dissociation of a perfect dislocation, or by condensation of point defects during high-rate plastic deformation. [3]
A crystalline material consists of a regular array of atoms, arranged into lattice planes. An edge dislocation is a defect where an extra half-plane of atoms is introduced midway through the crystal, distorting nearby planes of atoms.
Two types of crystallographic defects. Top right: edge dislocation. Bottom right: screw dislocation. An ideal crystal has every atom in a perfect, exactly repeating pattern. [19] However, in reality, most crystalline materials have a variety of crystallographic defects: places where the crystal's pattern is interrupted. The types and structures ...
In materials science, an interstitial defect is a type of point crystallographic defect where an atom of the same or of a different type, occupies an interstitial site in the crystal structure. When the atom is of the same type as those already present they are known as a self-interstitial defect .
In materials that were deformed under very high temperatures, lobate grain boundaries may be taken as evidence for diffusion creep. [7] Diffusion creep is a mechanism by which the volume of the crystals can increase. Larger grain sizes can be a sign that diffusion creep was more effective in a crystalline material.
A topological defect is perhaps the simplest way of understanding the general idea: it is a soliton that occurs in a crystalline lattice, typically studied in the context of solid state physics and materials science.