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Resonant tunneling diodes are typically realized in III-V compound material systems, where heterojunctions made up of various III-V compound semiconductors are used to create the double or multiple potential barriers in the conduction band or valence band. Reasonably high performance III-V resonant tunneling diodes have been realized.
The resonant-tunneling diode (RTD) has achieved some of the highest frequencies of any solid-state oscillator. [10] Another type of tunnel diode is a metal-insulator-insulator-metal (MIIM) diode, where an additional insulator layer allows "step tunneling" for more precise control of the diode. [11]
The resonant tunnelling diode makes use of quantum tunnelling in a very different manner to achieve a similar result. This diode has a resonant voltage for which a current favors a particular voltage, achieved by placing two thin layers with a high energy conductance band near each other.
Unlike classical diodes, its current is carried by resonant tunneling through two or more potential barriers (see figure at right). Its negative resistance behavior can only be understood with quantum mechanics: As the confined state moves close to Fermi level, tunnel current increases. As it moves away, the current decreases.
After several years working as a member of the technical staff at Bell Laboratories (BTL) at Murray Hill, NJ, developing an ultrasonic amplifier, a mechanism invented by D. L. White, Tsu moved to the IBM, T.J. Watson Research Center in Yorktown Heights, NY as an associate to Leo Esaki beginning a well-known collaboration that yielded a theory of man-made quantum materials, superlattices and ...
Pages for logged out editors learn more. Contributions; Talk; Resonant tunnelling diode
Sketch of the current–voltage (I–V) curve of a superconducting tunnel junction. The Cooper pair tunneling current is seen at V = 0, while the quasiparticle tunneling current is seen for V > 2Δ/e and V < -2Δ/e. All currents flowing through the STJ pass through the insulating layer via the process of quantum tunneling. There are two ...
Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices, such as photodiodes, light-emitting diodes and laser diodes. They are also critical to a full analysis of p-n junction devices such as bipolar junction transistors and p-n junction diodes .
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