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Focused ion beam, also known as FIB, is a technique used particularly in the semiconductor industry, materials science and increasingly in the biological field for site-specific analysis, deposition, and ablation of materials. A FIB setup is a scientific instrument that resembles a scanning electron microscope (SEM).
Ion-beam lithography offers higher resolution patterning than UV, X-ray, or electron beam lithography because these heavier particles have more momentum. This gives the ion beam a smaller wavelength than even an e-beam and therefore almost no diffraction. The momentum also reduces scattering in the target and in any residual gas.
Ion beams can be used for material modification (e.g. by sputtering or ion beam etching) and for ion beam analysis. Ion beam application, etching, or sputtering, is a technique conceptually similar to sandblasting, but using individual atoms in an ion beam to ablate a target. Reactive ion etching is an important extension that uses chemical ...
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Electron-beam-induced deposition (EBID) is a process of decomposing gaseous molecules by an electron beam leading to deposition of non-volatile fragments onto a nearby substrate. The electron beam is usually provided by a scanning electron microscope , which results in high spatial accuracy (potentially below one nanometer) and the possibility ...
As the helium ion beam interacts with the sample, it does not suffer from a large excitation volume, and hence provides sharp images with a large depth of field on a wide range of materials. Compared to a SEM, the secondary electron yield is quite high, allowing for imaging with currents as low as 1 femtoamp. The detectors provide information ...
A pattern transfer process (reactive ion etching, normally) can be used to transfer the pattern in the resist to the underneath substrate. [1] Alternatively, cold welding between two metal surfaces could also transfer low-dimensional nanostructured metal without heating (especially for critical sizes less than ~10 nm).
Gallium ion implantation can be used as etch mask in cryo-DRIE. Combined nanofabrication process of focused ion beam and cryo-DRIE was first reported by N Chekurov et al in their article "The fabrication of silicon nanostructures by local gallium implantation and cryogenic deep reactive ion etching".
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