Search results
Results from the WOW.Com Content Network
In semiconductor devices, problems in the device package may cause failures due to contamination, mechanical stress of the device, or open or short circuits. Failures most commonly occur near the beginning and near the ending of the lifetime of the parts, resulting in the bathtub curve graph of failure rates.
A low constant failure rate which is random in nature. Wear out failures are increasing failures due to aging semiconductor degradation mechanisms. TDDB is one of the intrinsic wear out failure mechanisms. Performance of the IC components can be evaluated for semiconductor wear out mechanisms including TDDB for any given operating conditions.
Reliability of a semiconductor device is the ability of the device to perform its intended function during the life of the device in the field. There are multiple considerations that need to be accounted for when developing reliable semiconductor devices: Semiconductor devices are very sensitive to impurities and particles. Therefore, to ...
The existence of two coexisting mechanisms has resulted in scientific controversy over the relative importance of each component, and over the mechanism of generation and recovery of interface states. In sub-micrometer devices nitrogen is incorporated into the silicon gate oxide to reduce the gate leakage current density and prevent boron ...
The IC is usually monitored under stress and tested at intermediate intervals. This reliability stress test is sometimes referred to as a lifetime test, device life test or extended burn in test and is used to trigger potential failure modes and assess IC lifetime. There are several types of HTOL:
This results in degradation of the material, causing intermittent glitches that are very difficult to diagnose, and eventual failure. Charge trapping is related to time-dependent gate oxide breakdown, and manifests as an increase in resistance and threshold voltage (the voltage needed for the transistor to conduct), and a decrease in drain ...
The input to a fault diagnostic is a tester datalog showing the failure characteristics of the device. The diagnostic algorithm uses an internal simulation of a fault model of the electrical circuit in order to compare the failure characteristics of the actual device with a set of simulated failure characteristics.
An approach to the design and development of reliable product to prevent failure, based on the knowledge of root cause failure mechanisms. The Physics of Failure (PoF) concept is based on the understanding of the relationships between requirements and the physical characteristics of the product and their variation in the manufacturing processes ...