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The 65 nm process is an advanced lithographic node used in volume CMOS semiconductor fabrication. Printed linewidths (i.e. transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm.
The technology used a 32 nm SOI process, two CPU cores per module, and up to four modules, ranging from a quad-core design costing approximately US$130 to a $280 eight-core design. Ambarella Inc. announced the availability of the A7L system-on-a-chip circuit for digital still cameras, providing 1080p60 high-definition video capabilities in ...
The reduction to 65 nm reduced the existing 230 mm 2 die based on the 90 nm process to half its current size, about 120 mm 2, greatly reducing IBM's manufacturing cost as well. On 12 March 2007, IBM announced that it started producing 65 nm Cells in its East Fishkill fab. The chips produced there are apparently only for IBMs own Cell blade ...
Process variation is the naturally occurring variation in the attributes of transistors (length, widths, oxide thickness) when integrated circuits are fabricated.The amount of process variation becomes particularly pronounced at smaller process nodes (<65 nm) as the variation becomes a larger percentage of the full length or width of the device and as feature sizes approach the fundamental ...
TCON, HDMI 1.4 Smart 3D TV MT5505 [186] Mali-4xx MP2 TCON, HDMI 1.4 Smart 3D TV MT5561: Single-core ARM11 @ 700 MHz CVBS, HDMI 1.4, VGA (D-sub), YPbPr Entry-level Connected DTV MT5580 [187] Single-core ARM Cortex-A9 @ 800 MHz TCON, Ethernet PHY + MAC, HDMI 1.4 Connected 3D TV MT5582: Quad-core ARM Cortex-A53: H.265, HEVC, VP-9 1080p H.264 LVDS ...
Supports 4 GB DRAM and 4K2K display output. 64-bit DRAM interface, manufactured on a 28 nm HPM process. [17] Amlogic M801 – Similar to M802 but with DRAM limited to 2 GB and display output limited to 1080p. [13] [17] Amlogic M805 – Quad-core ARM Cortex-A5-based SoC with Mali-450 MP2 GPU in a reduced-size 12 mm x 12 mm LFBGA package. [13] [17]
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For a 65 nm process, roughly V E ≈ 4 V/μm. [3] (A more elaborate approach is used in the EKV model. [4]). However, no simple formula used for λ to date provides accurate length or voltage dependence of r O for modern devices, forcing use of computer models, as discussed briefly next.