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The Shockley–Queisser limit, zoomed in near the region of peak efficiency. In a traditional solid-state semiconductor such as silicon, a solar cell is made from two doped crystals, one an n-type semiconductor, which has extra free electrons, and the other a p-type semiconductor, which is lacking free electrons, referred to as "holes."
The Shockley-Queisser limit for the efficiency of a single-junction solar cell under unconcentrated sunlight. This calculated curve uses actual solar spectrum data, and therefore the curve is wiggly from IR absorption bands in the atmosphere. This efficiency limit of about 34% can be exceeded by multijunction solar cells.
However, the current graphical QE analysis still cannot reflect the second intrinsic loss in the efficiency of solar cells, radiative recombination. To take the radiative recombination into account, we need to evaluate the radiative current density, J rad, first. According to Shockley and Queisser method, [29] J rad can be approximated as follows.
In particular I'm referring to the statement: "Solar cell efficiency of semiconductors has been calculated theoretically with Shockley-Quiesser limit for 60 years. However, recently Shockley-Quiesser limit has been shown to be incorrect and updated by Burak Ozdemir and Veronica Barone and it is called Ozdemir-Barone method."
The Shockley–Queisser limit radiative efficiency limit, also known as the detailed balance limit, [119] [120] is about 31% under an AM1.5G solar spectrum at 1000 W/m 2, for a Perovskite bandgap of 1.55 eV. [121] This is slightly smaller than the radiative limit of gallium arsenide of bandgap 1.42 eV which can reach a radiative efficiency of 33%.
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William Bradford Shockley Jr. (February 13, 1910 – August 12, 1989) was an American inventor, physicist, and eugenicist.He was the manager of a research group at Bell Labs that included John Bardeen and Walter Brattain.