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Assorted SO-DIMM Modules A 200-pin PC2-5300 DDR2 SO-DIMM. A 204-pin PC3-10600 DDR3 SO-DIMM. A SO-DIMM slot on a computer motherboard. A SO-DIMM (pronounced "so-dimm" / ˈ s oʊ d ɪ m /, also spelled "SODIMM") or small outline DIMM, is a smaller alternative to a DIMM, being roughly half the physical size of a regular DIMM. The first SODIMMs had ...
SO-DIMM, small outline DIMM, a smaller version of the DIMM, used in laptops; Compression Attached Memory Module, thinner than SO-DIMM; The large memories found in personal computers, workstations, and non-handheld game-consoles normally consist of dynamic RAM (DRAM). Other parts of the computer, such as cache memories normally use static RAM.
The CAMM module allows for shorter traces on the motherboard PCB as compared to SO-DIMM, allowing the memory to be run with less power and at higher speeds. The memory module is pressed and held in place against a bar with land grid array pin contacts which connect to the motherboard .
For a 64-bit-wide memory data interface, this equates to having 4 ranks, where each rank can be selected by a 2-bit chip select signal. Memory controllers such as the Intel 945 Chipset list the configurations they support: "256-Mib, 512-Mib, and 1-Gib DDR2 technologies for ×8 and ×16 devices", "four ranks for all DDR2 devices up to 512-Mibit ...
PC2-5300 DDR2 SO-DIMM (for notebooks) Comparison of memory modules for desktop PCs (DIMM) Comparison of memory modules for portable/mobile PCs (SO-DIMM) The key difference between DDR2 and DDR SDRAM is the increase in prefetch length. In DDR SDRAM, the prefetch length was two bits for every bit in a word; whereas it is four bits in DDR2 SDRAM.
UniDIMM is a SO-DIMM form factor available in two dimensions: 69.6 mm × 30 mm (2.74 by 1.18 inches) for the standard UniDIMM version (the same size as DDR4 SO-DIMMs [5]), and 69.6 mm × 20 mm (2.74 by 0.79 inches) for the low-profile version.
Typically DIMM or SO-DIMM. Power consumption A test with DDR and DDR2 RAM in 2005 found that average power consumption appeared to be of the order of 1–3 W per 512 MB module; this increases with clock rate and when in use rather than idling. [ 14 ]
[1] [2] In asynchronous DRAM, the interval is specified in nanoseconds (absolute time). [3] In synchronous DRAM , the interval is specified in clock cycles. Because the latency is dependent upon a number of clock ticks instead of absolute time, the actual time for an SDRAM module to respond to a CAS event might vary between uses of the same ...
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