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Time-dependent gate oxide breakdown (or time-dependent dielectric breakdown, TDDB) is a kind of transistor aging, a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long-time application of relatively low electric field (as opposed to immediate breakdown, which is caused by strong electric field).
In semiconductor devices, problems in the device package may cause failures due to contamination, mechanical stress of the device, or open or short circuits. Failures most commonly occur near the beginning and near the ending of the lifetime of the parts, resulting in the bathtub curve graph of failure rates .
The existence of two coexisting mechanisms has resulted in scientific controversy over the relative importance of each component, and over the mechanism of generation and recovery of interface states. In sub-micrometer devices nitrogen is incorporated into the silicon gate oxide to reduce the gate leakage current density and prevent boron ...
Reliability of a semiconductor device is the ability of the device to perform its intended function during the life of the device in the field. There are multiple considerations that need to be accounted for when developing reliable semiconductor devices: Semiconductor devices are very sensitive to impurities and particles. Therefore, to ...
graph with an example of steps in a failure mode and effects analysis. Failure mode and effects analysis (FMEA; often written with "failure modes" in plural) is the process of reviewing as many components, assemblies, and subsystems as possible to identify potential failure modes in a system and their causes and effects.
An approach to the design and development of reliable product to prevent failure, based on the knowledge of root cause failure mechanisms. The Physics of Failure (PoF) concept is based on the understanding of the relationships between requirements and the physical characteristics of the product and their variation in the manufacturing processes ...
Hot carrier injection (HCI) is a phenomenon in solid-state electronic devices where an electron or a “hole” gains sufficient kinetic energy to overcome a potential barrier necessary to break an interface state. The term "hot" refers to the effective temperature used to model carrier density, not to the overall temperature of the device.
Catastrophic optical damage (COD), or catastrophic optical mirror damage (COMD), is a failure mode of high-power semiconductor lasers.It occurs when the semiconductor junction is overloaded by exceeding its power density and absorbs too much of the produced light energy, leading to melting and recrystallization of the semiconductor material at the facets of the laser.