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If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...
A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices , such as an insulated-gate bipolar transistor (IGBT) or a thyristor , its main advantages are high switching speed and good efficiency at low voltages.
MOSFET Transistor: Working principle N-channel: Pin names: G = Gate, D = Drain, S = Source. The symbol doesn't always show the internal diode formed between the substrate and the source/drain/channel. Electronic symbol
In a depletion-mode MOSFET, the device is normally on at zero gate–source voltage. Such devices are used as load "resistors" in logic circuits (in depletion-load NMOS logic, for example). For N-type depletion-load devices, the threshold voltage might be about −3 V, so it could be turned off by pulling the gate 3 V negative (the drain, by ...
The MOSFET is also capable of handling higher power than the JFET. [35] The MOSFET was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses. [6] The MOSFET thus became the most common type of transistor in computers, electronics, [36] and communications technology (such as smartphones). [37]
The basic TFET structure is similar to a MOSFET except that the source and drain terminals of a TFET are doped of opposite types (see figure). A common TFET device structure consists of a P-I-N (p-type, intrinsic, n-type) junction, in which the electrostatic potential of the intrinsic region is controlled by a gate terminal.
Figure 3 shows a MOSFET common-source amplifier with an active load. Figure 4 shows the corresponding small-signal circuit when a load resistor R L is added at the output node and a Thévenin driver of applied voltage V A and series resistance R A is added at the input node.
The "V" shape of the MOSFET's gate allows the device to deliver a higher amount of current from the source to the drain of the device. The shape of the depletion region creates a wider channel, allowing more current to flow through it. During operation in blocking mode, the highest electric field occurs at the N + /p + junction.