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It is known as a current-limiting diode (CLD) or current-regulating diode (CRD). Internal structure. It consists of an n-channel JFET with the gate shorted to the source, which functions like a two-terminal current limiter (analogous to a voltage-limiting Zener diode). It allows a current through it to rise to a certain value, but not higher.
consequently no current-limiting resistor is required in the gate input; MOSFETs, unlike PN junction devices (such as LEDs) can be paralleled because resistance increases with temperature, although the quality of this load balance is largely dependent on the internal chemistry of each individual MOSFET in the circuit
An inrush current limiter is a device or devices combination used to limit inrush current. Passive resistive components such as resistors (with power dissipation drawback), or negative temperature coefficient (NTC) thermistors are simple options while the positive one (PTC) is used to limit max current afterward as the circuit has been operating (with cool-down time drawback on both).
Consequently, they are generally chosen for lower power circuitry, where the additional ongoing power waste is minor. Inrush limiting resistors are much cheaper than thermistors. They are found in most compact fluorescent lamps (light bulbs). They can be switched out of the circuit using a relay or MOSFET after inrush current is complete.
Active constant current is typically regulated using a depletion-mode MOSFET (metal–oxide–semiconductor field-effect transistor), which is the simplest current limiter. [2] Low drop-out (LDO) constant current regulators also allow the total LED voltage to be a higher fraction of the power supply voltage.
The basic current mirror can also be implemented using MOSFET transistors, as shown in Figure 2. Transistor M 1 is operating in the saturation or active mode, and so is M 2. In this setup, the output current I OUT is directly related to I REF, as discussed next.
The bootstrap circuit uses a coupling capacitor, formed from the gate/source capacitance of a transistor, to drive a signal line to slightly greater than the supply voltage. [10] Some all-pMOS integrated circuits such as the Intel 4004 and the Intel 8008 use that 2-transistor "bootstrap load" circuit. [11] [12] [13]
MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.