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In semiconductor fabrication, a resist is a thin layer used to transfer a circuit pattern to the semiconductor substrate which it is deposited upon. A resist can be patterned via lithography to form a (sub)micrometer-scale, temporary mask that protects selected areas of the underlying substrate during subsequent processing steps.
A thin film is a layer of materials ranging from fractions of a nanometer to several micrometers in thickness. [1] The controlled synthesis of materials as thin films (a process referred to as deposition) is a fundamental step in many applications.
The manufacturing of thick film devices/modules is an additive process involving deposition of several (typically max 6–8) successive layers of conductive, resistive and dielectric layers onto an electrically insulating substrate using a screen-printing process. [3] Thick Film Resistor Networks
These processes typically include depositing a film, patterning the film with the desired micro features, and removing (or etching) portions of the film. Thin film metrology is used typically during each of these individual process steps, to ensure the film structure has the desired characteristics in terms of thickness (t), refractive index (n ...
thin-film deposition – a technique for depositing a thin film of material onto a substrate or onto previously deposited layers; in IC manufacturing, the layers are insulators, semiconductors, and conductors; through-silicon via (TSV) – a vertical electrical connection that pierces the (usually silicon) substrate
Manufacturing of IPDs used include thick [12] and thin film [13] [14] technologies and variety of integrated circuit processing steps or modifications (like thicker or different metals than aluminum or copper) of them. Integrated passives are available as standard components/parts or as custom designed (for a specific application) devices.
A semiconductor device manufacturing facility at HP Labs. Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as microprocessors, microcontrollers, and memories (such as RAM and flash memory).
The advantage of employing molecular crystals instead of amorphous film is that their charge carrier mobilities are much larger. This is of particular advantage for OFET applications. Examples are thin films of crystalline rubrene prepared by hot wall epitaxy. [22] [23]