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Resonant tunneling diodes are typically realized in III-V compound material systems, where heterojunctions made up of various III-V compound semiconductors are used to create the double or multiple potential barriers in the conduction band or valence band. Reasonably high performance III-V resonant tunneling diodes have been realized.
The resonant-tunneling diode (RTD) has achieved some of the highest frequencies of any solid-state oscillator. [10] Another type of tunnel diode is a metal-insulator-insulator-metal (MIIM) diode, where an additional insulator layer allows "step tunneling" for more precise control of the diode. [11]
The resonant tunnelling diode makes use of quantum tunnelling in a very different manner to achieve a similar result. This diode has a resonant voltage for which a current favors a particular voltage, achieved by placing two thin layers with a high energy conductance band near each other.
Unlike classical diodes, its current is carried by resonant tunneling through two or more potential barriers (see figure at right). Its negative resistance behavior can only be understood with quantum mechanics: As the confined state moves close to Fermi level, tunnel current increases. As it moves away, the current decreases.
In electronics, the Zener effect (employed most notably in the appropriately named Zener diode) is a type of electrical breakdown, discovered by Clarence Melvin Zener. It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor , leading to numerous ...
The tunnel diode circuit (see diagram) is an example. [82] The tunnel diode TD has voltage controlled negative differential resistance. [54] The battery adds a constant voltage (bias) across the diode so it operates in its negative resistance range, and provides power to amplify the signal.
Metal–insulator–metal (MIM) diode is a type of nonlinear device very similar to a semiconductor diode and capable of very fast operation. Depending on the geometry and the material used for fabrication, the operation mechanisms are governed either by quantum tunnelling or thermal activation.
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