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The Monte Carlo method for electron transport is a semiclassical Monte Carlo (MC) approach of modeling semiconductor transport. Assuming the carrier motion consists of free flights interrupted by scattering mechanisms, a computer is utilized to simulate the trajectories of particles as they move across the device under the influence of an electric field using classical mechanics.
Then the electron mobility μ is defined as =. Electron mobility is almost always specified in units of cm 2 /(V⋅s). This is different from the SI unit of mobility, m 2 /(V⋅s). They are related by 1 m 2 /(V⋅s) = 10 4 cm 2 /(V⋅s). Conductivity is proportional to the product of mobility and carrier concentration. For example, the same ...
Characterization of transport properties requires fabricating a device and measuring its current-voltage characteristics. Devices for transport studies are typically fabricated by thin film deposition or break junctions. The dominant transport mechanism in a measured device can be determined by differential conductance analysis.
The electron–hole pair is the fundamental unit of generation and recombination in inorganic semiconductors, corresponding to an electron transitioning between the valence band and the conduction band where generation of an electron is a transition from the valence band to the conduction band and recombination leads to a reverse transition.
where g s = 2, due to spin degeneracy, e is the electron charge, h is the Planck constant, and are the Fermi levels of A and B, M(E) is the number of propagating modes in the channel, f′(E) is the deviation from the equilibrium electron distribution (perturbation), and T(E) is the transmission probability (T = 1 for ballistic).
Diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (electrons and/or electron holes).This is the current which is due to the transport of charges occurring because of non-uniform concentration of charged particles in a semiconductor.
There are two recognized types of charge carriers in semiconductors.One is electrons, which carry a negative electric charge.In addition, it is convenient to treat the traveling vacancies in the valence band electron population as a second type of charge carrier, which carry a positive charge equal in magnitude to that of an electron.
Spintronics emerged from discoveries in the 1980s concerning spin-dependent electron transport phenomena in solid-state devices. This includes the observation of spin-polarized electron injection from a ferromagnetic metal to a normal metal by Johnson and Silsbee (1985) [5] and the discovery of giant magnetoresistance independently by Albert Fert et al. [6] and Peter Grünberg et al. (1988). [7]