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The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pushed or pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility.
In 2000, an MIT report investigated theoretical and experimental hole mobility in SiGe heterostructure-based PMOS devices. [4] In 2003, IBM was reported to be among primary proponents of the technology. [5] In 2002, Intel had featured strained silicon technology in its 90nm X86 Pentium microprocessors series in early 2000. [5]
Strain engineering refers to a general strategy employed in semiconductor manufacturing to enhance device performance. Performance benefits are achieved by modulating strain, as one example, in the transistor channel, which enhances electron mobility (or hole mobility) and thereby conductivity through the channel. Another example are ...
At the end of 2008, SMIC was the first China-based semiconductor company to move to 45 nm, having licensed the bulk 45 nm process from IBM. In 2008, TSMC moved on to a 40 nm process. Many critical feature sizes are smaller than the wavelength of light used for lithography (i.e., 193 nm and 248 nm).
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
A semiconductor diode is a device typically made from a single p–n junction.At the junction of a p-type and an n-type semiconductor, there forms a depletion region where current conduction is inhibited by the lack of mobile charge carriers.
IGZO-TFT was developed by Hideo Hosono's group at Tokyo Institute of Technology and Japan Science and Technology Agency (JST) in 2003 (crystalline IGZO-TFT) [1] [2] and in 2004 (amorphous IGZO-TFT). [3] IGZO-TFT has 20–50 times the electron mobility of amorphous silicon, which has often been used in liquid-crystal displays (LCDs) and e-papers ...
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