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In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pushed or pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility.
Mobilities of 2DHG systems are smaller than those of most 2DEG systems, in part due to larger effective masses of holes (few 1000 cm 2 /(V·s) can already be considered high mobility [8]). Aside from being in practically every semiconductor device in use today, two dimensional systems allow access to interesting physics.
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
For free carriers in low-mobility systems, the recombination rate is often described with the Langevin recombination rate. [19] The model is often used for disordered systems such as organic materials (and is hence relevant for organic solar cells [20]) and other such systems.
The manufacture of semiconductors controls precisely the location and concentration of p- and n-type dopants. The connection of n-type and p-type semiconductors form p–n junctions. The most common semiconductor device in the world is the MOSFET (metal–oxide–semiconductor field-effect transistor), [1] also called the MOS transistor.
Variable range hopping can be used to describe disordered systems such as molecularly-doped polymers, low molecular weight glasses and conjugated polymers. [3] In the limit of very dilute systems, the nearest-neighbour dependence ln σ ∝ − γ α − 1 N 0 − 1 / 3 {\displaystyle \ln \sigma \propto -\gamma \alpha ^{-1}N_{0}^{-1/3}} is ...
Strain engineering refers to a general strategy employed in semiconductor manufacturing to enhance device performance. Performance benefits are achieved by modulating strain, as one example, in the transistor channel, which enhances electron mobility (or hole mobility) and thereby conductivity through the channel.
In a semiconductor with a single carrier type, the magnetoresistance is proportional to (1 + (μB) 2), where μ is the semiconductor mobility (units m 2 ·V −1 ·s −1, equivalently m 2 ·Wb −1, or T −1) and B is the magnetic field (units teslas).
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