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Silicon–germanium on insulator (SGOI) is a technology analogous to the silicon on insulator (SOI) technology currently employed in computer chips. SGOI increases the speed of the transistors inside microchips by straining the crystal lattice under the MOS transistor gate, resulting in improved electron mobility and higher drive currents.
The prefix is followed by a two-, three- or four-digit number with no significance as to device properties, although early devices with low numbers tend to be germanium devices. For example, 2N3055 is a silicon n–p–n power transistor, 2N1301 is a p–n–p germanium switching transistor. A letter suffix, such as "A", is sometimes used to ...
Germanium: Ge: 0.67 [5] [6] indirect: Used in early radar detection diodes and first transistors, with lesser purity required than silicon. A substrate for high-efficiency multijunction photovoltaic cells. Very similar lattice constant to gallium arsenide. High-purity crystals used for gamma spectroscopy.
Germanium was difficult to purify and had a limited operational temperature range. Scientists theorized that silicon would be easier to fabricate, but few bothered to investigate this possibility. Morris Tanenbaum et al. at Bell Laboratories [28] were the first to develop a working silicon transistor on January 26, 1954. [29]
The germanium transistor was more common in the 1950s and 1960s but has a greater tendency to exhibit thermal runaway. Since germanium p-n junctions have a lower forward bias than silicon, germanium transistors turn on at lower voltage.
Silicon and germanium are used here effectively because they have 4 valence electrons in their outermost shell, which gives them the ability to gain or lose electrons equally at the same time. Binary compounds , particularly between elements in groups 13 and 15, such as gallium arsenide , groups 12 and 16, groups 14 and 16, and between ...
Strained silicon. Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. [1] This can be accomplished by putting the layer of silicon over a substrate of silicon–germanium (Si Ge). As the atoms in the silicon layer align with the atoms of the underlying silicon germanium layer ...
The TO-66 package is made entirely of metal and is commonly used by silicon controlled rectifiers and power transistors. [2] In Europe, it was popularly used by the complementary germanium power transistors AD161/AD162. [3] The TO-66 package consists of a diamond-shaped base plate with diagonals of 31.4 mm (1.24 in) and 19.0 mm (0.75 in).
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